|
The MASTAR (Model for Analog Simulation of subThreshold, saturation and weak Avalanche Regions) is an analytical model of Metal-Oxide Semiconductor Field-Effect Transistors, developed using the voltage-doping transformation (VDT) technique . MASTAR offers good accuracy and continuity in current and its derivatives in all operation regimes of the MOSFET devices. The model has been successfully used in CAD/EDA simulation tools.〔(Modeling MOS Devices Using the MASTAR Model with UTMOST III )〕 The official ITRS definition of the acronymus MASTAR is Model for Assessment of CMOS Technologies And Roadmaps.〔 〕 This software is developed by STMicroelectronics and is freely distributed on ITRS organization web site. == References == 〔 抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「MASTAR MOSFET Model」の詳細全文を読む スポンサード リンク
|